GaN PA Accelerated Aging Tester

Accelerated aging test is one of the key basic tests to evaluate the reliability of IC. It simulates the long-term operation of the components by means of accelerating electrical stress. Because the electrical excitation applied in the test reflects the worst case performance of the device, the use test process essentially simulates running the entire service life of the device.

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Accelerated aging test is a key fundamental test to evaluate IC reliability. It uses electrical stress acceleration for the long run of the simulator components. Because the electrical excitation applied in the test reflects the worst-case performance of the device, the test process essentially simulates the entire life of the device.

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Functions

• It can support all types of JESD22 standard GaN device power-on experiments, including HTOL, HTRB, IOL and THB experiments. Some experiments do not need auxiliary heating equipment such as welding table, temperature box and temperature cycle equipment, which greatly saves equipment purchase and use cost.

• It can output 480 channels of adjustable grid voltage signal, at the same time support a maximum of 480 GaN single pipe at the same time experiment, can be synchronized for many lots and many samples experiment.

• Special power amplifier tube failure monitoring mechanism, in a certain range can be reflected through the indicator light whether the power amplifier tube failure (grid short circuit)

• With the gate pressure stepping operation program, it can adjust the gate pressure in accordance with the recommended step, which greatly reduces the time cost of adjusting the gate pressure when opening the threshold change in the experiment process of the device, and greatly improves the operation efficiency. At the same time, with a maximum of 15 temperature sensors, it can read the temperature around and in the middle of up to three RADIO frequency plates

• With external interface, signal generator can be used to flexibly configure the switch cycle of IOL experiment, can directly drive 48V fan, and provide external control signal to control the relay of 220V fan, without temperature cycle equipment can achieve the power amplifier tube temperature cycle change of more than 100℃.

• The RF board supports external unified grid voltage and high leakage pressure, and the HTRB and THB experiment environment can be configured independently without the control board.

• The RF board is a disposable consumable and needs to be customized based on user's requirements. The RF board supports ceramic and plastic GaN devices, table pasting, and sink installation.

Advantages

• The power supply is simple, which greatly reduces the power amplifier grid voltage alone power supply equipment needs, and the time overhead brought by serial experiment.

• The device is simple to operate and very easy to monitor temperature. We can directly calculate the junction temperature of the power amplifier tube according to the thermal resistance. In the experiment, the temperature difference of each power amplifier tube is within 5℃, we can adjust the power amplifier grid pressure according to the actual temperature, and the power amplifier cliff has memory storage function, which is easy to accurately control the working state of the power amplifier tube and check the problem.